Manufacturer Part Number
HAT2267H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
The HAT2267H-EL-E is a high-performance N-channel MOSFET transistor from Renesas Electronics Corporation.
Product Features and Performance
80V drain-to-source voltage (Vdss)
25A continuous drain current (Id) at 25°C
16mΩ maximum on-resistance (Rds(on)) at 12.5A, 10V
2150pF maximum input capacitance (Ciss) at 10V
25W maximum power dissipation (Tc)
Operates at up to 150°C junction temperature (TJ)
Product Advantages
Excellent on-resistance and high current capability
Suitable for high-voltage, high-current switching applications
Compact LFPAK surface-mount package
Key Technical Parameters
Vdss: 80V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 16mΩ @ 12.5A, 10V
Id @ 25°C: 25A
Ciss (Max) @ Vds: 2150pF @ 10V
Power Dissipation (Max): 25W (Tc)
FET Type: N-Channel
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with various high-voltage, high-current switching applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power switching
Compact LFPAK package for space-constrained designs
Reliable operation at high temperatures up to 150°C
RoHS3 compliance for environmental safety
Suitable for a wide range of high-voltage, high-current applications
