Manufacturer Part Number
HAT2266H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-Channel MOSFET transistor for power applications
Product Features and Performance
60V drain-source voltage
12mΩ maximum on-resistance at 15A and 10V gate-source voltage
30A continuous drain current at 25°C
3600pF maximum input capacitance at 10V drain-source voltage
23W maximum power dissipation at 25°C case temperature
N-Channel MOSFET design
Product Advantages
Efficient power handling
Low on-resistance for low power loss
High continuous current capability
Small surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 12mΩ
Drain Current (Id): 30A
Input Capacitance (Ciss): 3600pF
Power Dissipation (Pd): 23W
Operating Temperature: 150°C
Quality and Safety Features
RoHS3 compliant
LFPAK surface-mount package
Compatibility
Compatible with standard MOSFET drive circuits
Application Areas
Power conversion and control
Motor drives
Switched-mode power supplies
Industrial automation
Automotive electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement parts or upgrades may be available
Several Key Reasons to Choose This Product
Efficient power handling with low on-resistance
High continuous current capability
Small surface-mount package for compact designs
Robust design for reliable operation
RoHS3 compliance for environmental friendliness
