Manufacturer Part Number
HAT2197R-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
The HAT2197R-EL-E is a discrete N-channel MOSFET transistor that offers high efficiency and reliable performance.
Product Features and Performance
High drain current capability up to 16A at 25°C
Low on-resistance of 6.7mΩ at 8A, 10V
High operating temperature up to 150°C
Low input capacitance of 2650pF at 10V
Optimized for power conversion and control applications
Product Advantages
Efficient power handling with low conduction losses
Robust design for high-temperature operations
Compact surface-mount package for space-saving layouts
Reliable performance for long-term reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
Power Dissipation (Ptot): 2.5W
Gate Charge (Qg): 18nC at 4.5V
Quality and Safety Features
RoHS3 compliant
8-SOP package for surface-mount assembly
Compatibility
The HAT2197R-EL-E is compatible with a wide range of power supply and control applications.
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement and upgrade options are available.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and reliable surface-mount package
Versatile application potential in power electronics
Backed by Renesas' reputation for quality and innovation
HAT2198R01TOSHIA