Manufacturer Part Number
HAT2195R-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Product
Single N-Channel MOSFET Transistor
Product Features and Performance
Surface Mount Package (8-SOIC)
Wide Operating Temperature Range: -55°C to 150°C
High Drain-Source Voltage: 30V
Low On-Resistance: 5.8mΩ @ 9A, 10V
High Continuous Drain Current: 18A @ 25°C
Low Input Capacitance: 3400pF @ 10V
Low Gate Charge: 23nC @ 4.5V
Product Advantages
Efficient power switching performance
Reliable operation in a wide temperature range
Compact surface mount package
Key Technical Parameters
Vdss: 30V
Vgs(max): ±20V
Rds(on) (max): 5.8mΩ
Id (continuous): 18A
Ciss (max): 3400pF
Power Dissipation: 2.5W
FET Type: N-Channel
Vgs(th) (max): 2.5V @ 1mA
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Qg (max): 23nC @ 4.5V
Quality and Safety Features
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Suitable for a wide range of applications requiring reliable power switching
Compatibility
Surface Mount (8-SOIC) package
Compatible with various electronic circuit designs
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
Industrial controls
Product Lifecycle
Current product offering
Availability of replacements or upgrades may vary, check with manufacturer
Key Reasons to Choose This Product
Efficient power switching performance
Wide operating temperature range for reliable operation
Compact surface mount package for space-constrained designs
Low on-resistance and high current capability
Low input capacitance and gate charge for efficient switching
Proven MOSFET technology for quality and safety