Manufacturer Part Number
71V016SA12PHG8
Manufacturer
Renesas Electronics America
Introduction
High-speed 1Mbit SRAM for data storage and retrieval applications
Product Features and Performance
1Mbit memory capacity
Asynchronous SRAM technology
Parallel memory interface for quick data access
12ns access and write cycle time
SRAM - suited for high speed, low-latency applications
Product Advantages
Fast data access for real-time applications
Reliable storage solution in volatile memory category
Efficient for systems requiring frequent write operations
Key Technical Parameters
Memory Size: 1Mbit
Memory Organization: 64K x 16
Access Time: 12ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Surface Mount TSOP-44 package for PCB assembly
Quality and Safety Features
Compliance with industrial standards for quality and reliability
Operational over standard commercial temperature range
Compatibility
Compatible with parallel memory interface systems
Usable for standard logic levels
Application Areas
Embedded systems
Telecommunications
Computing
Consumer electronics
Industrial applications
Product Lifecycle
Product Status: Active
No indication of nearing discontinuation
Availability of replacements or upgrades not explicitly stated
Several Key Reasons to Choose This Product
High-speed operation with 12ns access time
Stable and fast volatile memory option for critical applications
Suitable for a wide range of operating voltages
Adaptable for numerous electronic applications due to industry-standard packaging
Renesas Electronics America's reputation for reliable and durable semiconductor products