71V124SA12YG - Renesas Electronics America Inc

Manufacturer Part Number

71V124SA12YG

Manufacturer

Renesas Electronics America

Introduction

High-speed 1Mbit SRAM Memory Device

Product Features and Performance

Volatile Memory Type

SRAM - Asynchronous Technology

1Mbit Memory Size

128K x 8 Memory Organization

Parallel Memory Interface

Fast Write Cycle Time of 12ns

Quick Access Time of 12ns

Product Advantages

Rapid Read/Write Operations

Stable Data Retention in Volatile Applications

High Integration Capacity for Complex Systems

Key Technical Parameters

Memory Format: SRAM

Supply Voltage: 3V ~ 3.6V

Operating Temperature Range: 0°C ~ 70°C

Surface Mount Orientation

32-BSOJ Package Type

Quality and Safety Features

Dependable Performance within Specified Temperature Range

Compatibility

Compatible with Systems Requiring Parallel Memory Interfaces

Application Areas

Can be Used in a Variety of High-Speed Computing and Processing Environments

Product Lifecycle

Obsolete Status

Availability of Replacements or Upgrades May Vary

Several Key Reasons to Choose This Product

Supports High-speed Operational Requirements

Enhances System Reliability Due to Fast Access and Write Times

Optimizes Performance in a Wide Range of Operating Conditions

Compatible with Various Parallel Interface Applications

Manufactured by Renesas, a Trusted Leader in Semiconductor Solutions