2SC4703-T1-AZ - Renesas Electronics America Inc

Manufacturer Part Number

2SC4703-T1-AZ

Manufacturer

Renesas Electronics Corporation

Introduction

The 2SC4703-T1-AZ is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) intended for radio frequency (RF) applications.

Product Features and Performance

Operating temperature up to 150°C

Maximum power dissipation of 1.8W

Collector-Emitter Breakdown Voltage (BVCEO) up to 12V

Maximum Collector Current (IC) of 150mA

DC Current Gain (hFE) of at least 50 at 50mA, 5V

Transition Frequency (fT) of 6GHz

Power Gain of 8.3dB

Noise Figure of 2.3dB at 1GHz

Product Advantages

Suitable for high-frequency, high-power RF applications

Capable of operating at high temperatures

Robust packaging and reliable performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 12V

Current Collector (Ic) (Max): 150mA

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V

Frequency Transition: 6GHz

Gain: 8.3dB

Noise Figure (dB Typ @ f): 2.3dB @ 1GHz

Quality and Safety Features

RoHS compliance (status not specified)

Suitable for surface mount applications

Compatibility

Packaging: SOT-89 (TO-243AA)

Application Areas

Suitable for high-frequency, high-power RF applications, such as:

- Radio transmitters

- Power amplifiers

- Wireless communication equipment

Product Lifecycle

The current status of the product's lifecycle is not specified.

Several Key Reasons to Choose This Product

Capable of high-frequency, high-power RF performance

Able to operate at high temperatures up to 150°C

Robust packaging and reliable performance

Suitable for surface mount applications