Manufacturer Part Number
2SC4703-T1-AZ
Manufacturer
Renesas Electronics Corporation
Introduction
The 2SC4703-T1-AZ is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) intended for radio frequency (RF) applications.
Product Features and Performance
Operating temperature up to 150°C
Maximum power dissipation of 1.8W
Collector-Emitter Breakdown Voltage (BVCEO) up to 12V
Maximum Collector Current (IC) of 150mA
DC Current Gain (hFE) of at least 50 at 50mA, 5V
Transition Frequency (fT) of 6GHz
Power Gain of 8.3dB
Noise Figure of 2.3dB at 1GHz
Product Advantages
Suitable for high-frequency, high-power RF applications
Capable of operating at high temperatures
Robust packaging and reliable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 12V
Current Collector (Ic) (Max): 150mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency Transition: 6GHz
Gain: 8.3dB
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Quality and Safety Features
RoHS compliance (status not specified)
Suitable for surface mount applications
Compatibility
Packaging: SOT-89 (TO-243AA)
Application Areas
Suitable for high-frequency, high-power RF applications, such as:
- Radio transmitters
- Power amplifiers
- Wireless communication equipment
Product Lifecycle
The current status of the product's lifecycle is not specified.
Several Key Reasons to Choose This Product
Capable of high-frequency, high-power RF performance
Able to operate at high temperatures up to 150°C
Robust packaging and reliable performance
Suitable for surface mount applications
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