Manufacturer Part Number
2SC4703-T1-AZ
Manufacturer
CEL (California Eastern Laboratories)
Introduction
Discrete semiconductor product
Bipolar Junction Transistor (BJT) for RF applications
Product Features and Performance
NPN transistor
Optimized for high-frequency RF applications
Wide operating temperature range up to 150°C
High power handling capacity up to 1.8W
High collector-emitter breakdown voltage of 12V
High collector current capacity up to 150mA
High current gain (hFE) of at least 50 @ 50mA, 5V
High transition frequency of 6GHz
High gain of 8.3dB
Low noise figure of 2.3dB at 1GHz
Product Advantages
Suitable for use in high-frequency RF circuits
Reliable performance under high temperature conditions
Capable of handling high power and current demands
Key Technical Parameters
Manufacturer Part Number: 2SC4703-T1-AZ
Package: SOT-89 (TO-243AA)
Operating Temperature: 150°C (TJ)
Power Max: 1.8W
Voltage Collector Emitter Breakdown (Max): 12V
Current Collector (Ic) (Max): 150mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency Transition: 6GHz
Gain: 8.3dB
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Quality and Safety Features
Rigorous quality control and testing procedures
Compliant with industry safety standards
Compatibility
Suitable for use in a wide range of RF and high-frequency electronic circuits
Application Areas
RF amplifiers
Wireless communication systems
Radio frequency identification (RFID) applications
Industrial and commercial electronics
Product Lifecycle
Currently in active production
Availability of replacement parts and upgrades
Key Reasons to Choose This Product
Exceptional high-frequency performance with high gain, low noise, and high transition frequency
Robust design for reliable operation in high-temperature environments
Capable of handling high power and current demands
Compatibility with a wide range of RF and high-frequency applications
Availability of replacement parts and potential for future upgrades
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