Manufacturer Part Number
2SC3357-T1-A
Manufacturer
Renesas Electronics Corporation
Introduction
This is a discrete bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
NPN transistor type
Operates at high frequencies up to 6.5GHz
Provides a power gain of 10dB
Low noise figure of 1.8dB at 1GHz
Rated for a maximum collector current of 100mA
Collector-emitter breakdown voltage of 12V
Power dissipation of up to 1.2W
Product Advantages
Optimized for high-frequency RF circuits
Reliable performance with low noise
Compact surface mount package
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): Minimum 50 @ 20mA, 10V
Transition Frequency: 6.5GHz
Gain: 10dB
Noise Figure: 1.8dB @ 1GHz
Collector-Emitter Breakdown Voltage: 12V
Power Dissipation: 1.2W
Operating Temperature: 150°C (TJ)
Quality and Safety Features
Compliant with relevant industry standards
Reliable and durable construction
Compatibility
This transistor is commonly used in various RF and high-frequency electronic circuits, such as:
Radio frequency amplifiers
Oscillators
Mixers
Switches
Application Areas
Wireless communication systems
Radio frequency (RF) circuits
Industrial and commercial electronics
Product Lifecycle
This product is an active and widely used component in the industry. There are no known plans for discontinuation, and replacement or upgraded options are readily available.
Key Reasons to Choose This Product
Optimized for high-frequency RF applications with excellent performance characteristics
Reliable and durable construction ensuring long-term reliability
Compact surface mount package for efficient board-level integration
Widely compatible with various RF and high-frequency circuit designs
Readily available as an active and well-supported product in the market
