Manufacturer Part Number
2SC3357-T1-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
This is a high-frequency NPN bipolar junction transistor (BJT) designed for RF applications.
Product Features and Performance
Operates at high frequencies up to 6.5GHz
Provides a typical gain of 10dB
Low noise figure of 1.8dB at 1GHz
Rated for 1.2W of power dissipation
Collector-emitter breakdown voltage of 12V
Product Advantages
Excellent high-frequency performance
Low noise characteristics
Compact surface mount package
Suitable for a wide range of RF circuit designs
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): Minimum 50 @ 20mA, 10V
Frequency Transition: 6.5GHz
Power Dissipation: 1.2W
Collector-Emitter Breakdown Voltage: 12V
Collector Current (Ic): Maximum 100mA
Operating Temperature: Up to 150°C
Quality and Safety Features
Reliable operation in high-temperature environments
Robust surface mount package (SOT-89)
Compatibility
This transistor is suitable for use in a wide range of RF and microwave circuits, including amplifiers, oscillators, and mixers.
Application Areas
Radio frequency (RF) circuits
Wireless communication systems
Microwave and satellite communication equipment
Industrial and military electronics
Product Lifecycle
This product is an active and widely used component in the market. Replacement and upgrade options are readily available from the manufacturer and authorized distributors.
Key Reasons to Choose This Product
High-frequency performance up to 6.5GHz
Low noise figure of 1.8dB at 1GHz
Compact surface mount package for easy integration
Reliable operation in high-temperature environments
Suitable for a wide range of RF and microwave circuit designs
