Manufacturer Part Number
RFD3055LESM9A
Manufacturer
Harris Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage
107mOhm Maximum On-Resistance
11A Continuous Drain Current at 25°C
350pF Maximum Input Capacitance
38W Maximum Power Dissipation
-55°C to 175°C Operating Temperature Range
Product Advantages
RoHS3 Compliant
TO-252 (D-Pak) Packaging
Key Technical Parameters
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 5V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Suitable for a variety of power management and control applications
Product Lifecycle
Current production, no indication of discontinuation
Several Key Reasons to Choose This Product
High-performance N-Channel MOSFET with low on-resistance and high current capability
Suitable for a wide range of power management and control applications
RoHS3 compliant and available in a compact surface mount package
Proven reliability and performance from a reputable manufacturer