RFD3055LESM - onsemi

Manufacturer Part Number

RFD3055LESM

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

MOSFET (Metal Oxide) Technology

N-Channel FET Type

High-performance power MOSFET

Product Advantages

Low on-resistance for efficient power conversion

High switching speed for fast switching applications

Wide operating temperature range of -55°C to 175°C

Key Technical Parameters

Drain to Source Voltage (Vdss): 60 V

Gate-Source Voltage (Vgs) (Max): ±16 V

On-State Resistance (Rds On) (Max): 107 mΩ @ 8 A, 5 V

Continuous Drain Current (Id) @ 25°C: 11 A (Tc)

Input Capacitance (Ciss) (Max): 350 pF @ 25 V

Power Dissipation (Max): 38 W (Tc)

Gate Charge (Qg) (Max): 11.3 nC @ 10 V

Threshold Voltage (Vgs(th)) (Max): 3 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 5 V

Quality and Safety Features

High reliability and ruggedness

Designed for safety and compliance with industry standards

Compatibility

Surface mount package (TO-252-3, DPak)

Application Areas

Switching power supplies

Motor drives

Inverters

Battery chargers

Industrial and consumer electronics

Product Lifecycle

Currently available

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Efficient power conversion with low on-resistance

Fast switching for high-speed applications

Wide operating temperature range for diverse environments

Reliable and safe operation

Compatibility with common surface mount packaging