Manufacturer Part Number
CM800DY-24S
Manufacturer
Powerex, Inc.
Introduction
High-power discrete IGBT (Insulated Gate Bipolar Transistor) module
Product Features and Performance
Able to handle high power up to 5355 W
Half-bridge configuration
Rated for a maximum collector current of 790 A
Rated for a maximum collector-emitter voltage of 1200 V
Low on-state voltage drop of 2.4 V at 15 V gate voltage and 800 A collector current
Wide operating temperature range of -40°C to 150°C
Product Advantages
Efficient power handling capabilities
Robust half-bridge design
Low conduction losses
Suitable for high-power applications
Key Technical Parameters
Input Capacitance (Cies): 80 nF at 10 V
No built-in NTC thermistor
Chassis mount package
Quality and Safety Features
RoHS compliant
Hermetically sealed module for reliable operation
Compatibility
Suitable for a variety of high-power industrial and energy applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Other high-power electronic systems
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Proven IGBT technology for reliable high-power performance
Efficient power handling capabilities
Robust half-bridge design for versatile applications
Wide operating temperature range for demanding environments
RoHS compliance for environmentally conscious applications
