Manufacturer Part Number
CM800DU-12H
Manufacturer
Powerex, Inc.
Introduction
High-power IGBT (Insulated Gate Bipolar Transistor) module designed for industrial and power electronics applications.
Product Features and Performance
Capable of handling up to 1500W of power
Half-bridge configuration with two IGBT devices
Wide operating temperature range of -40°C to 150°C
Input capacitance of 70.4nF at 10V
Maximum collector-emitter breakdown voltage of 600V
Maximum collector current of 800A
Maximum Vce(on) of 3.15V at 15V gate voltage and 800A collector current
Product Advantages
Excellent power handling capability
Wide temperature range for diverse applications
High voltage and current ratings for demanding power electronics
Compact half-bridge module design
Key Technical Parameters
Manufacturer Part Number: CM800DU-12H
Packaging: Module
Mounting Type: Chassis Mount
Series: IGBTMOD
Package: Bulk
Input Capacitance (Cies): 70.4nF @ 10V
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 800A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 800A
Current Collector Cutoff (Max): 2mA
Quality and Safety Features
Robust module construction for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for use in a wide range of industrial and power electronics applications
Application Areas
Motor drives
Power inverters
Welding equipment
Induction heating
Electric vehicles
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power handling capability up to 1500W
Wide operating temperature range from -40°C to 150°C
Excellent voltage and current ratings for demanding applications
Compact half-bridge module design for efficient integration
Reliable and robust construction for long-lasting performance
