Manufacturer Part Number
CM75E3U-24H
Manufacturer
Powerex, Inc.
Introduction
This is a discrete semiconductor product, specifically an IGBT (Insulated-Gate Bipolar Transistor) module from Powerex.
Product Features and Performance
IGBT module with a maximum power rating of 600 W
Standard input configuration
Single-configuration module
Input capacitance (Cies) of 11 nF at 10 V
Maximum collector-emitter breakdown voltage of 1200 V
No NTC thermistor
Maximum collector current (Ic) of 75 A
Maximum collector-emitter saturation voltage (Vce(on)) of 3.7 V at 15 V gate-emitter voltage and 75 A collector current
Maximum collector cutoff current of 1 mA
Chassis mount package
Product Advantages
High power handling capability
High voltage rating
Robust design for reliable performance
Key Technical Parameters
Operating temperature range: -40°C to 150°C (junction temperature)
Packaging: Module
Quality and Safety Features
Designed and manufactured to meet high-quality and safety standards
Compatibility
This IGBT module is designed for use in a variety of power electronic applications.
Application Areas
Suitable for use in various power conversion and control systems, such as motor drives, inverters, and power supplies.
Product Lifecycle
This product is currently available and actively supported by the manufacturer.
Replacement or upgrade options may be available, depending on your specific requirements.
Several Key Reasons to Choose This Product
Robust and reliable performance with high power handling and voltage capabilities
Compact and efficient module design
Broad compatibility and suitability for various power electronics applications
Manufactured to high-quality and safety standards
