Manufacturer Part Number
CM75DY-28H
Manufacturer
Powerex, Inc.
Introduction
High power discrete semiconductor product
Transistor IGBT (Insulated Gate Bipolar Transistor) module
Product Features and Performance
Capable of 600 W of power
Half bridge configuration
Input capacitance of 15 nF at 10 V
Collector-emitter breakdown voltage of 1400 V
Collector current (max) of 75 A
Collector-emitter saturation voltage of 4.2 V at 15 V gate-emitter, 75 A collector current
Collector cutoff current (max) of 1 mA
Operating temperature range of -40°C to 150°C
Product Advantages
High power handling capability
Robust design for demanding applications
Efficient power conversion
Key Technical Parameters
Power rating: 600 W
Input configuration: Half bridge
Input capacitance: 15 nF @ 10 V
Collector-emitter breakdown voltage: 1400 V
Collector current (max): 75 A
Collector-emitter saturation voltage: 4.2 V @ 15 V, 75 A
Collector cutoff current (max): 1 mA
Operating temperature range: -40°C to 150°C
Quality and Safety Features
RoHS non-compliant
Compatibility
Chassis mount module
Standard input voltage
Application Areas
Power conversion systems
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Current product offering, no discontinuation information available
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High power handling capability up to 600 W
Robust IGBT module design for demanding applications
Efficient power conversion performance
Wide operating temperature range of -40°C to 150°C
Extensive application areas in power conversion, motor drives, and industrial automation