Manufacturer Part Number
PSMN5R0-30YL,115
Manufacturer
Nexperia
Introduction
High performance N-channel TrenchMOS FET transistor in a LFPAK56 (Power-SO8) package for high power, high efficiency applications.
Product Features and Performance
Supports continuous drain current up to 91A at 25°C
Very low on-resistance of 5mΩ @ 15A, 10V
Input capacitance of 1760pF at 12V
Power dissipation up to 61W at 25°C
Wide operating temperature range of -55°C to 175°C
Suitable for high switching frequency applications
Product Advantages
Excellent thermal performance and power handling capability
Extremely low on-resistance for high efficiency
Compact LFPAK56 (Power-SO8) package
Suitable for high power, high frequency switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5mΩ @ 15A, 10V
Continuous Drain Current (Id): 91A at 25°C
Input Capacitance (Ciss): 1760pF at 12V
Power Dissipation (Ptot): 61W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high reliability applications
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
Switch-mode power supplies
Inverters and motor drives
Wireless power transfer
Industrial and consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Nexperia
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High current and power handling capability
Compact LFPAK56 (Power-SO8) package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance for use in environmentally-conscious applications
PSMN5R6-100BSFreescale / NXP Semiconductors