Manufacturer Part Number
PSMN4R8-100BSEJ
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET transistor for high-power switching applications
Product Features and Performance
Extremely low on-resistance (RDS(on) = 4.8 mΩ at 25 A, 10 V)
High drain current capability (ID = 120 A at 25°C)
Fast switching speed
High power dissipation (405 W at Tc = 25°C)
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Efficient power conversion and high energy savings
Robust design for reliable operation
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-source voltage (VDS): 100 V
Gate-to-source voltage (VGS): ±20 V
On-resistance (RDS(on)): 4.8 mΩ @ 25 A, 10 V
Drain current (ID): 120 A at 25°C
Input capacitance (Ciss): 14400 pF @ 50 V
Gate charge (Qg): 278 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability, high-stress applications
Compatibility
Surface mount (D2PAK) package
Tape and reel (TR) packaging
Application Areas
High-power switching applications
Motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product offering
Replacement or upgrade options available upon request
Key Reasons to Choose This Product
Excellent power efficiency and energy savings
Reliable and robust design for demanding applications
Suitable for high-frequency, high-power switching
Wide operating temperature range for versatile use
Streamlined compatibility and packaging options
PSMN4R5-40PS MOSFreescale / NXP Semiconductors
PSMN4R5-40BS