PSMN4R8-100BSEJ - Nexperia USA Inc.

Manufacturer Part Number

PSMN4R8-100BSEJ

Manufacturer

Nexperia

Introduction

High-performance N-channel MOSFET transistor for high-power switching applications

Product Features and Performance

Extremely low on-resistance (RDS(on) = 4.8 mΩ at 25 A, 10 V)

High drain current capability (ID = 120 A at 25°C)

Fast switching speed

High power dissipation (405 W at Tc = 25°C)

Wide operating temperature range (-55°C to 175°C)

Product Advantages

Efficient power conversion and high energy savings

Robust design for reliable operation

Suitable for high-power, high-frequency applications

Key Technical Parameters

Drain-to-source voltage (VDS): 100 V

Gate-to-source voltage (VGS): ±20 V

On-resistance (RDS(on)): 4.8 mΩ @ 25 A, 10 V

Drain current (ID): 120 A at 25°C

Input capacitance (Ciss): 14400 pF @ 50 V

Gate charge (Qg): 278 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability, high-stress applications

Compatibility

Surface mount (D2PAK) package

Tape and reel (TR) packaging

Application Areas

High-power switching applications

Motor drives

Power supplies

Inverters

Industrial and automotive electronics

Product Lifecycle

Current product offering

Replacement or upgrade options available upon request

Key Reasons to Choose This Product

Excellent power efficiency and energy savings

Reliable and robust design for demanding applications

Suitable for high-frequency, high-power switching

Wide operating temperature range for versatile use

Streamlined compatibility and packaging options