Manufacturer Part Number
PSMN4R2-30MLDX
Manufacturer
Nexperia
Introduction
High-performance MOSFET transistor with low on-resistance and high-current handling capability.
Product Features and Performance
Low on-resistance of 4.3 mΩ at 25 A, 10 V
High continuous drain current of 70 A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 1795 pF at 15 V
Integrated Schottky body diode
Product Advantages
Excellent power handling and efficiency
Compact surface-mount package (LFPAK33)
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Maximum Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.2 V at 1 mA
Gate Charge (Qg): 29.3 nC at 10 V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of high-performance power electronic applications
Application Areas
Suitable for high-current, high-frequency switching applications such as:
- Power converters
- Motor drives
- Lighting ballasts
- Inductive heating
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgraded products may become available in the future as technology advances.
Several Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance and high current capability.
Compact surface-mount package (LFPAK33) for space-constrained designs.
Suitable for a wide range of high-current, high-frequency switching applications.
Designed and manufactured to high quality standards, ensuring reliable performance.
RoHS3 compliant, addressing environmental concerns.
