Manufacturer Part Number
PSMN4R0-30YLDX
Manufacturer
Nexperia
Introduction
High-performance N-channel TrenchMOS FET
Product Features and Performance
Optimized for high frequency and high power switching applications
Low on-resistance and fast switching
Suitable for high-frequency, high-power switching applications
Product Advantages
Excellent on-state and switching performance
High reliability and ruggedness
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20 V
On-Resistance (Rds(on)): 4 mΩ @ 25 A, 10 V
Continuous Drain Current (Id): 95 A @ 25°C
Input Capacitance (Ciss): 1272 pF @ 15 V
Power Dissipation (Max): 64 W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for surface mount applications
LFPAK56, Power-SO8 package options
Application Areas
High-frequency, high-power switching applications
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacement/upgrade options available
Key Reasons to Choose This Product
Excellent on-state and switching performance
High reliability and ruggedness
Suitable for high-frequency, high-power switching applications
RoHS3 compliant
Surface mount compatibility
PSMN3R9-60XSQNXP Semiconductors / FreescaleMOSFET N-CH 60V 75A TO-220F