Manufacturer Part Number
PSMN2R4-30YLDX
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET with low on-resistance and high current handling capability, suitable for power switching applications.
Product Features and Performance
Low on-resistance (RDS(on) = 2.4 mΩ)
High continuous drain current (ID = 100 A)
Low gate charge (Qg = 31.3 nC)
Fast switching speed
High reliability and robustness
Product Advantages
Efficient power conversion
Reduced power losses
Compact design
Improved system efficiency
Key Technical Parameters
Drain-Source Voltage (VDS): 30 V
Gate-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 2.4 mΩ
Continuous Drain Current (ID): 100 A
Input Capacitance (Ciss): 2256 pF
Power Dissipation (Ptot): 106 W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Robust package design (LFPAK56, Power-SO8)
Compatibility
This MOSFET is compatible with a wide range of power electronics applications, including:
Switch-mode power supplies
Motor drives
DC-DC converters
Inverters
Battery management systems
Application Areas
Industrial electronics
Automotive electronics
Telecommunications equipment
Consumer electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power efficiency and low power losses due to the low on-resistance and fast switching characteristics.
High current handling capability, allowing for compact and efficient system designs.
Robust package design and AEC-Q101 qualification for reliable operation in demanding applications.
Versatile compatibility with a wide range of power electronics applications.
Proven performance and reliability from a trusted manufacturer, Nexperia.
PSMN2R4-30YLD.115Freescale / NXP Semiconductors