Manufacturer Part Number
PSMN2R4-30MLDX
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET with low on-resistance and high power capability in a compact LFPAK33 package.
Product Features and Performance
Low on-resistance for high efficiency
High power capability up to 91W
Fast switching for high-frequency operation
Compact LFPAK33 package
Product Advantages
Improved power density and efficiency
Reduced system size and cost
Excellent thermal performance
Key Technical Parameters
Drain-source voltage (Vds): 30V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.4mΩ @ 25A, 10V
Continuous drain current (Id): 70A @ 25°C
Input capacitance (Ciss): 3264pF @ 15V
Operating temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
LFPAK33 package for improved thermal performance and reliability
Compatibility
Suitable for a wide range of power management and conversion applications, including:
Switching power supplies
Motor drives
Inverters
Power tools
Industrial automation
Application Areas
Power management
Motor control
Inverters
Industrial automation
Consumer electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacements and upgrades are available.
Key Reasons to Choose This Product
Excellent efficiency and power density
Compact and thermally efficient LFPAK33 package
Robust and reliable performance
Supports high-frequency, high-power applications
Wide range of compatible applications
PSMN2R6-30YLC.115Freescale / NXP Semiconductors