Manufacturer Part Number
PSMN2R0-60PS,127
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET with low on-resistance and high avalanche ruggedness.
Product Features and Performance
Extremely low on-resistance for efficient power switching
Optimized for high-frequency, high-current and high-voltage applications
Robust avalanche capability for increased system reliability
Positive temperature coefficient for easy paralleling
Product Advantages
Excellent RDS(on) performance
High avalanche energy rating
Positive temperature coefficient
Suitable for high-frequency and high-current applications
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Maximum Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 2.2mΩ @ 25A, 10V
Continuous Drain Current (ID): 120A (at TC = 25°C)
Input Capacitance (Ciss): 9997pF @ 30V
Power Dissipation: 338W (at TC = 25°C)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 175°C)
Robust design for high reliability and ruggedness
Compatibility
Through-hole mounting (TO-220AB package)
Application Areas
High-frequency, high-current, and high-voltage power conversion
Motor drives
Industrial and automotive power electronics
Product Lifecycle
Current product, no known discontinuation plans
Replacements and upgrades available from Nexperia
Key Reasons to Choose This Product
Excellent RDS(on) performance for efficient power switching
High avalanche energy rating for increased system reliability
Positive temperature coefficient for easy paralleling
Suitable for high-frequency, high-current, and high-voltage applications
Robust design and wide operating temperature range
PSMN2R0-60PSLUMILEDS