Manufacturer Part Number
PSMN2R0-60PS,127
Manufacturer
NXP Semiconductors
Introduction
High-performance n-channel MOSFET transistor for power applications
Product Features and Performance
Optimized for high-frequency, high-power switching applications
Superior RDS(on) performance for efficient power conversion
Robust 60V drain-source voltage rating
High current capability up to 120A continuous drain current
Low gate charge for efficient switching
Wide operating temperature range from -55°C to 175°C
Product Advantages
Exceptional power efficiency
High power density
Reliable and rugged performance
Broad application suitability
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 2.2mΩ @ 25A, 10V
Continuous Drain Current (ID): 120A @ 25°C
Input Capacitance (Ciss): 9997pF @ 30V
Power Dissipation (Ptot): 338W @ 25°C
Quality and Safety Features
Robust TO-220AB package for reliable operation
Designed and manufactured to high quality standards
Compliant with relevant safety and environmental regulations
Compatibility
Suitable for a wide range of power conversion, motor control, and other high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation equipment
Automotive electronics
Product Lifecycle
This product is currently in production and actively supported by the manufacturer. Replacement and upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and performance
High current and voltage handling capabilities
Robust and reliable design for demanding applications
Wide operating temperature range for broad usability
Optimized for high-frequency, high-power switching
PSMN2R0-30YLFreescale / NXP Semiconductors
PSMN2R0-60PSLUMILEDS