Manufacturer Part Number
PMZB320UPEYL
Manufacturer
Nexperia
Introduction
This product is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in a variety of electronic applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 30 V
Vgs (Max) of ±8 V
Maximum Drain-Source On-Resistance (Rds On) of 510 mΩ @ 1 A, 4.5 V
Continuous Drain Current (Id) of 1 A at 25°C
Input Capacitance (Ciss) of 122 pF @ 15 V
Power Dissipation (Max) of 350 mW (Ta), 6.25 W (Tc)
Operating Temperature Range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power handling
Compact DFN1006B-3 surface-mount package
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Vgs(th) (Max) of 950 mV @ 250 A
Drive Voltage (Max Rds On, Min Rds On) of 1.5 V, 4.5 V
Gate Charge (Qg) (Max) of 1.4 nC @ 4.5 V
Quality and Safety Features
RoHS3 Compliant
Reliable surface-mount package
Compatibility
This MOSFET is suitable for use in a wide range of electronic applications, including power management, switching, and control circuits.
Application Areas
Power management
Switching circuits
Control circuits
General electronic applications
Product Lifecycle
This product is an active and currently available part from Nexperia. Replacements or upgrades may be available as technology evolves.
Key Reasons to Choose This Product
Efficient power handling due to low on-resistance
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile applications
Reliable performance and RoHS3 compliance for quality assurance