Manufacturer Part Number
PMZ290UNE2YL
Manufacturer
Nexperia
Introduction
This is a single N-channel MOSFET transistor from Nexperia.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
20V drain-source voltage
Maximum gate-source voltage of ±8V
Low on-resistance of 320 milliohms @ 1.2A, 4.5V
Continuous drain current of 1.2A at 25°C
Input capacitance of 46pF @ 10V
Power dissipation of 350mW at Ta and 5.43W at Tc
Gate charge of 1.4nC @ 4.5V
Product Advantages
Efficient power switching and amplification
Low on-resistance for low power loss
Wide temperature range of -55°C to 150°C
Small surface mount SOT-883 package
Key Technical Parameters
Drain-source voltage (Vdss): 20V
Gate-source voltage (Vgs): ±8V
On-resistance (Rds(on)): 320 milliohms
Continuous drain current (Id): 1.2A
Input capacitance (Ciss): 46pF
Power dissipation: 350mW (Ta), 5.43W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount SOT-883 package
Application Areas
Power management circuits
Switching circuits
Amplifier circuits
Motor control
Power supplies
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient power switching and amplification
Low on-resistance for low power loss
Wide temperature range
Small surface mount package
RoHS3 compliant for high-reliability applications
PMZ390UNFreescale / NXP Semiconductors
PMZ390UNENexperia