Manufacturer Part Number
PMV20ENR
Manufacturer
Nexperia
Introduction
N-channel MOSFET transistor
Suitable for general-purpose switching and amplification applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 30V
Gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 21mΩ @ 6A, 10V
Continuous drain current (Id) of 6A @ 25°C
Input capacitance (Ciss) of 435pF @ 15V
Power dissipation of 510mW (Ta), 6.94W (Tc)
Operating temperature range of -55°C to 150°C
Product Advantages
Suitable for high-speed switching applications
Compact TO-236AB package for space-saving design
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)) of 2V @ 250μA
Drive voltage range of 4.5V to 10V
Gate charge (Qg) of 10.8nC @ 10V
Quality and Safety Features
ROHS3 compliant
Meets industry safety and reliability standards
Compatibility
Compatible with various electronic circuits and systems that require high-speed switching and power conversion
Application Areas
Switching power supplies
Motor control
Amplifiers
General-purpose switching and amplification
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Nexperia
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact and space-saving design
Reliable operation across a wide temperature range
Suitable for a variety of switching and amplification applications
Backed by Nexperia's reputation for quality and innovation
PMV213SN,215NXP SemiconductorsPMV213 - N-CHANNEL TRENCHMOS STA