Manufacturer Part Number
PMV16XNR
Manufacturer
Nexperia
Introduction
N-channel enhancement-mode field-effect transistor (FET) in a TO-236AB (SC-59) Surface Mount package
Product Features and Performance
Designed for general-purpose switching and amplification applications
Suitable for use as an interface circuit, driver, or logic-level translator
Withstands up to 20 V between drain and source
Supports continuous drain current up to 6.8 A at 25°C
Low on-resistance (Rds(on)) of 20 mΩ (max) at 6.8 A, 4.5 V
Fast switching capability with low gate charge (Qg) of 20.2 nC (max) at 4.5 V
Product Advantages
Optimized performance and efficiency
Compact surface-mount package
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Gate-to-Source Voltage (Vgs): ±12 V
On-Resistance (Rds(on)): 20 mΩ (max) at 6.8 A, 4.5 V
Continuous Drain Current (Id): 6.8 A at 25°C
Gate Charge (Qg): 20.2 nC (max) at 4.5 V
Input Capacitance (Ciss): 1240 pF (max) at 10 V
Power Dissipation: 510 mW (Ta), 6.94 W (Tc)
Quality and Safety Features
RoHS3 compliant
Qualified for use in automotive and industrial applications
Compatibility
Suitable for use in a wide range of electronic devices and circuits
Application Areas
Switching and amplification applications
Interface circuits, drivers, and logic-level translators
General-purpose electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Optimized performance and efficiency for switching and amplification
Compact surface-mount packaging for space-constrained designs
Reliable and robust design for demanding applications
RoHS3 compliance for use in a wide range of electronics
Compatibility with a variety of electronic devices and circuits
PMV185XNNexperia