PMK50XP,518 - Nexperia USA Inc.

Manufacturer Part Number

PMK50XP,518

Manufacturer

Nexperia

Introduction

High-performance P-channel TrenchMOS power MOSFET

Product Features and Performance

Low on-resistance for high efficiency

Fast switching for high-frequency applications

Low gate charge for high-speed operation

Trench technology for high cell density

Good avalanche capability

Large active cell area for high current handling

Product Advantages

Excellent power efficiency

High power density

Fast switching

Reliable operation

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±12 V

Rds On (Max) @ Id, Vgs: 50 mΩ @ 2.8 A, 4.5 V

Current Continuous Drain (Id) @ 25°C: 7.9 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V

Power Dissipation (Max): 5 W (Tc)

Quality and Safety Features

RoHS3 compliant

Reliable operation within -55°C to 150°C temperature range

Compatibility

Compatible with various electronic circuit designs

Application Areas

High-frequency switching power supplies

Motor drives

Inverters

DC/DC converters

Product Lifecycle

Currently in production

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Excellent power efficiency and high power density

Fast switching capability for high-frequency applications

Reliable operation across a wide temperature range

Compatibility with various electronic circuit designs

Availability and potential for future replacements or upgrades