PMGD780SN,115 - Nexperia USA Inc.

Manufacturer Part Number

PMGD780SN,115

Manufacturer

Nexperia

Introduction

Nexperia's PMGD780SN,115 is a dual N-channel TrenchMOS power MOSFET designed for a wide range of applications.

Product Features and Performance

60V Drain to Source Voltage (Vdss)

920mOhm On-resistance (Rds(on)) at 300mA, 10V

490mA Continuous Drain Current (Id) at 25°C

23pF Input Capacitance (Ciss) at 30V

05nC Gate Charge (Qg) at 10V

Logic Level Gate (Vgs(th) ≤ 2.5V at 250μA)

Operating Temperature Range: -55°C to 150°C

Product Advantages

Efficient power conversion with low on-resistance

Reliable performance across wide temperature range

Compact 6-TSSOP surface mount package

Suitable for various power management applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

On-resistance (Rds(on)): 920mOhm @ 300mA, 10V

Continuous Drain Current (Id): 490mA @ 25°C

Input Capacitance (Ciss): 23pF @ 30V

Gate Charge (Qg): 1.05nC @ 10V

Gate Threshold Voltage (Vgs(th)): ≤ 2.5V @ 250μA

Quality and Safety Features

RoHS3 compliant

Suitable for Tape and Reel packaging

Compatibility

Designed for a wide range of power management applications

Application Areas

Switched-mode power supplies

Motor drives

Battery chargers

General purpose power management

Product Lifecycle

Currently in production

Replacement/upgrade options available from Nexperia

Key Reasons to Choose This Product

Excellent power efficiency with low on-resistance

Reliable performance across wide temperature range

Compact surface mount package

Suitable for various power management applications

RoHS3 compliance for environmental responsibility