Manufacturer Part Number
PMGD280UN,115
Manufacturer
Nexperia
Introduction
High-performance dual N-channel TrenchMOS logic-level MOSFETs in a compact 6-TSSOP package.
Product Features and Performance
20V drain-to-source voltage
340mΩ max on-resistance at 200mA, 4.5V
45pF max input capacitance at 20V
1V max gate threshold voltage at 250μA
89nC max gate charge at 4.5V
400mW max power dissipation
-55°C to 150°C operating temperature range
Product Advantages
Compact 6-TSSOP package
Logic-level gate for easy drive
Low on-resistance for efficient switching
Low input capacitance for fast switching
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
On-resistance (Rds(on)): 340mΩ max @ 200mA, 4.5V
Input capacitance (Ciss): 45pF max @ 20V
Gate threshold voltage (Vgs(th)): 1V max @ 250μA
Gate charge (Qg): 0.89nC max @ 4.5V
Power dissipation: 400mW max
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with logic-level gate drive circuits
Application Areas
General-purpose switching
Power management
Motor control
Battery-powered devices
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Compact 6-TSSOP package for space-constrained designs
Low on-resistance for efficient switching
Fast switching performance with low input capacitance
Wide operating temperature range for diverse applications
RoHS3 compliance and AEC-Q101 qualification for high quality and safety
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