Manufacturer Part Number
PMBTA92,215
Manufacturer
Nexperia
Introduction
Nexperia's PMBTA92,215 is a compact, high-voltage, high-power PNP bipolar junction transistor (BJT) suitable for a wide range of applications.
Product Features and Performance
Designed for high-voltage, high-power applications
High collector-emitter breakdown voltage of 300V
Collector current rating of 100mA
Power dissipation of 250mW
Transition frequency of 50MHz
Small surface-mount TO-236AB (SC-59) package
Product Advantages
Excellent high-voltage and high-power handling capabilities
Compact and space-saving package
Suitable for a wide range of applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 300V
Collector Current (IC): 100mA
Power Dissipation (Ptot): 250mW
Transition Frequency (fT): 50MHz
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Suitable for use in high-voltage, high-power amplifiers, switches, and control circuits
Commonly used in automotive, industrial, and consumer electronics applications
Product Lifecycle
Currently in production
No indication of discontinuation
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Excellent high-voltage and high-power handling capabilities
Compact and space-saving package
Automotive-grade quality and safety features
Suitable for a wide range of high-voltage, high-power applications
Proven reliability and performance in the market
PMBTH81LUMILEDS