Manufacturer Part Number
PMBTA56,215
Manufacturer
NXP Semiconductors
Introduction
This product is a single bipolar junction transistor (BJT) with PNP polarity, designed for various automotive and general-purpose applications.
Product Features and Performance
Wide operating temperature range up to 150°C
High power handling capability of 250mW
High voltage rating of up to 80V
High collector current capability of up to 500mA
Low collector-emitter saturation voltage of 250mV @ 10mA, 100mA
High current gain (hFE) of min. 100 @ 100mA, 1V
High transition frequency of 50MHz
Product Advantages
Robust design suitable for harsh automotive environments
Excellent thermal management for high-power applications
Versatile performance characteristics for diverse use cases
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 80V
Collector Current (Max): 500mA
Collector Cutoff Current (Max): 50nA
DC Current Gain (hFE) (Min): 100 @ 100mA, 1V
Transition Frequency: 50MHz
Quality and Safety Features
Compliant with AEC-Q101 automotive quality standard
Suitable for surface-mount technology (SMT) assembly
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Automotive electronics
Industrial controls
Power management circuits
General-purpose amplification and switching
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgraded versions may become available in the future as technology evolves.
Several Key Reasons to Choose This Product
Robust design and automotive-grade quality for reliable performance
Wide operating temperature range and high power handling for versatile applications
Excellent electrical characteristics, including high voltage, current, and frequency capabilities
Compact surface-mount package for efficient board-level integration
PMBTA56+215Freescale / NXP Semiconductors
PMBTH81LUMILEDS