PHC21025,118 - Nexperia USA Inc.

Manufacturer Part Number

PHC21025,118

Manufacturer

Nexperia

Introduction

Dual N-Channel and P-Channel MOSFET Array

Product Features and Performance

N and P-Channel MOSFET configuration

Dual MOSFET transistor in single package

Logic level gate

Low on-resistance

High current capability

Low input capacitance

Product Advantages

Compact dual MOSFET design

Efficient power handling

Simplified circuit design

Suitable for space-constrained applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 100mΩ @ 2.2A, 10V

Continuous Drain Current (Id): 3.5A (N-Channel), 2.3A (P-Channel)

Input Capacitance (Ciss): 250pF @ 20V

Gate Threshold Voltage (Vgs(th)): 2.8V @ 1mA

Gate Charge (Qg): 30nC @ 10V

Power Dissipation: 2W

Operating Temperature: 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Suitable for Tape and Reel packaging

Compatibility

Surface mount package (8-SOIC)

Application Areas

Power management circuits

Motor control

Switching circuits

General-purpose amplification and switching

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

Dual MOSFET design for efficient power distribution

Low on-resistance for improved efficiency

High current capability for demanding applications

Small package size for space-constrained designs

Compliance with RoHS regulations for environmentally-friendly use