Manufacturer Part Number
PDTD143ETR
Manufacturer
Nexperia
Introduction
The PDTD143ETR is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Nexperia. It is designed for use in a variety of electronic circuits and applications.
Product Features and Performance
Power rating of 320 mW
Collector-Emitter breakdown voltage (VCEO) of 50 V
Maximum collector current (IC) of 500 mA
Low collector-emitter saturation voltage (VCEsat) of 100 mV at 2.5 mA, 50 mA
Minimum DC current gain (hFE) of 60 at 50 mA, 5 V
Transition frequency (fT) of 225 MHz
Integrated 4.7 kΩ base and emitter-base resistors
Product Advantages
Pre-biased design for simplified circuit implementation
High-speed switching capabilities
Small surface-mount package (TO-236AB)
RoHS-compliant construction
Key Technical Parameters
Package: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Package Quantity: Tape & Reel (TR)
Quality and Safety Features
RoHS3 compliant
Manufactured in accordance with industry quality standards
Compatibility
The PDTD143ETR is compatible with a wide range of electronic circuits and applications, including:
Amplifiers
Switches
Logic gates
Driver circuits
Application Areas
Consumer electronics
Industrial control systems
Telecommunications equipment
Automotive electronics
Product Lifecycle
The PDTD143ETR is an active and readily available product from Nexperia. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Pre-biased design for simplified circuit implementation
High-speed switching performance
Small and compact surface-mount package
RoHS compliance for environmentally-friendly construction
Reliable and well-supported product from a reputable manufacturer
PDTD113ZTFreescale / NXP Semiconductors
PDTG143EKLUMILEDS