PDTD123YT,215 - Nexperia USA Inc.

Manufacturer Part Number

PDTD123YT,215

Manufacturer

Nexperia

Introduction

This is a pre-biased NPN bipolar junction transistor (BJT) from Nexperia, designed for a variety of general-purpose applications.

Product Features and Performance

Power rating of 250 mW

Collector-emitter breakdown voltage up to 50 V

Collector current up to 500 mA

Collector cutoff current of 500 nA

VCE saturation voltage of 300 mV @ 2.5 mA, 50 mA

DC current gain (hFE) of 70 min @ 50 mA, 5 V

Built-in 2.2 kΩ base resistor and 10 kΩ emitter-base resistor

Product Advantages

Pre-biased design simplifies circuit design

Capable of handling moderate power and current levels

Suitable for a wide range of general-purpose applications

Key Technical Parameters

Package: TO-236-3, SC-59, SOT-23-3

RoHS compliance: RoHS3 compliant

Manufacturer's packaging: TO-236AB

Supplier device package: TO-236AB

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant for environmental safety

Reliable surface-mount package

Compatibility

Compatible with a variety of general-purpose electronic circuits and applications

Application Areas

Suitable for use in general-purpose electronic circuits, such as amplifiers, switches, and logic gates

Product Lifecycle

This product is an active and readily available part from Nexperia.

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

Capable of handling moderate power and current levels

Suitable for a wide range of general-purpose applications

Reliable surface-mount package and RoHS3 compliance

Readily available and actively supported by Nexperia