Manufacturer Part Number
PDTC114EU, PDTC115
Manufacturer
Nexperia
Introduction
Bipolar Junction Transistors (BJTs) with pre-biased base
Product Features and Performance
Low collector-emitter saturation voltage
High current capability
High collector-emitter breakdown voltage
High current gain
Pre-biased base
Product Advantages
Reduced system complexity
Improved reliability
Easy integration into compact designs
Key Technical Parameters
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 1 A
Collector-Emitter Saturation Voltage: 150 mV @ 500 μA, 10 mA
DC Current Gain: 30 min @ 5 mA, 5 V
Base Resistor: 10 kΩ
Emitter-Base Resistor: 10 kΩ
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount package: SOT-323
Application Areas
Automotive electronics
Industrial control
Consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Compact surface mount package
Simplified circuit design with pre-biased base
High performance and reliability
Automotive and industrial grade qualification
