Manufacturer Part Number
PDTC114ET,215
Manufacturer
Nexperia
Introduction
Nexperia's PDTC114ET,215 is a single, pre-biased NPN bipolar junction transistor (BJT) designed for a wide range of applications.
Product Features and Performance
250 mW power rating
50 V collector-emitter breakdown voltage
100 mA maximum collector current
1 A maximum collector cutoff current
150 mV Vce saturation voltage at 10 mA collector current
30 minimum DC current gain at 5 mA collector current and 5 V collector-emitter voltage
230 MHz transition frequency
10 kOhm base resistor and 10 kOhm emitter-base resistor
Product Advantages
Pre-biased design simplifies circuit design
Compact surface mount package (TO-236AB)
Reliable performance in a wide range of applications
Key Technical Parameters
Power rating: 250 mW
Collector-emitter breakdown voltage: 50 V
Maximum collector current: 100 mA
Maximum collector cutoff current: 1 A
Vce saturation voltage: 150 mV @ 10 mA
DC current gain: 30 min @ 5 mA, 5 V
Transition frequency: 230 MHz
Base resistor: 10 kOhms
Emitter-base resistor: 10 kOhms
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (TO-236AB)
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General-purpose amplifier and switching applications
Signal processing circuits
Power management circuits
Logic gates
Sensor and control circuits
Product Lifecycle
The PDTC114ET,215 is an active product, with no plans for discontinuation.
Replacement or upgrade options are available from Nexperia's product portfolio.
Key Reasons to Choose This Product
Pre-biased design simplifies circuit design and reduces component count
Reliable performance in a wide range of applications
Compact surface mount package for efficient board space utilization
RoHS3 compliance for environmentally-friendly applications
Availability of replacement and upgrade options from the manufacturer
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