Manufacturer Part Number
PBHV9414ZX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
AEC-Q100 Qualified
Tape & Reel Packaging
Operating Temperature up to 150°C
Power Rating of 650 mW
Collector-Emitter Breakdown Voltage up to 140 V
Collector Current up to 4 A
Collector Cutoff Current less than 100 nA
Low Collector-Emitter Saturation Voltage of 550 mV @ 400 mA, 4 A
Minimum DC Current Gain (hFE) of 100 @ 10 mA, 5 V
Surface Mount Packaging (SOT-223)
Product Advantages
Automotive-grade reliability and performance
Wide operating temperature range
High power and voltage handling capability
Low saturation voltage for efficient power conversion
Good current gain characteristics
Key Technical Parameters
Package: TO-261-4, TO-261AA (SOT-223)
Transistor Type: PNP
Power Rating: 650 mW
Collector-Emitter Breakdown Voltage: 140 V
Collector Current: 4 A
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 550 mV @ 400 mA, 4 A
DC Current Gain (hFE): 100 @ 10 mA, 5 V
Quality and Safety Features
RoHS3 Compliant
AEC-Q100 Qualified
Compatibility
Suitable for a wide range of electronic applications, including power supplies, motor drivers, and voltage regulators.
Application Areas
Automotive
Industrial
Consumer Electronics
Product Lifecycle
Currently available
No discontinuation plans
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Automotive-grade reliability and performance
Wide operating temperature range
High power and voltage handling capability
Low saturation voltage for efficient power conversion
Good current gain characteristics
RoHS3 compliance and AEC-Q100 qualification for quality and safety
PBHV9050ZFreescale / NXP Semiconductors