Manufacturer Part Number
PBHV8560ZX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
RoHS3 Compliant
SOT-223 Package
Automotive, AEC-Q100 Qualified
High Voltage, High Power Capability
Wide Operating Temperature Range (-55°C to +150°C)
Low Collector-Emitter Saturation Voltage
High Current Gain
Product Advantages
Suitable for Automotive and Industrial Applications
Rugged and Reliable Performance
Compact and Space-Efficient Packaging
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 500mA
Collector Cutoff Current (Max): 100nA
Collector-Emitter Saturation Voltage: 100mV @ 5mA, 50mA
DC Current Gain: 70 @ 50mA, 10V
Power Dissipation (Max): 650mW
Operating Temperature Range: -55°C to +150°C
Quality and Safety Features
RoHS3 Compliant
AEC-Q100 Qualified for Automotive Applications
Compatibility
Suitable for Surface Mount Assembly
Application Areas
Automotive Electronics
Industrial Power Supplies
Switching Circuits
Amplifier Circuits
Product Lifecycle
Current Product
Replacements and Upgrades Available
Key Reasons to Choose This Product
Excellent High Voltage and High Power Capability
Robust Automotive-Grade Performance
Compact and Space-Efficient Packaging
Reliable and Rugged Design
Suitable for a Wide Range of Applications