Manufacturer Part Number
PBHV8115T,215
Manufacturer
Nexperia
Introduction
High-voltage NPN bipolar transistor
Product Features and Performance
High collector-emitter breakdown voltage of 150V
High collector current capability of 1A
High transition frequency of 30 MHz
Low collector-emitter saturation voltage of 350 mV @ 1A
Robust TO-236AB package
Product Advantages
Suitable for high-voltage switching and amplification applications
Excellent performance-to-price ratio
Reliable and rugged design
Key Technical Parameters
Collector-emitter breakdown voltage (max): 150V
Collector current (max): 1A
Collector-emitter saturation voltage (max): 350 mV @ 1A
DC current gain (min): 50 @ 500 mA, 10V
Transition frequency: 30 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with TO-236-3, SC-59, SOT-23-3 packages
Application Areas
High-voltage switching and amplification circuits
Power supplies
Motor drives
Industrial electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High-performance and reliable NPN bipolar transistor
Suitable for a wide range of high-voltage applications
Excellent price-to-performance ratio
Robust and compact TO-236AB package
RoHS3 compliance for environmental friendliness