Manufacturer Part Number
PBHV8115T,215
Manufacturer
NXP Semiconductors
Introduction
High voltage NPN bipolar junction transistor (BJT) for general purpose applications
Product Features and Performance
High voltage transistor with 150V collector-emitter breakdown voltage
Low collector-emitter saturation voltage (350mV @ 1A)
Wide operating temperature range up to 150°C
Power dissipation up to 300mW
Product Advantages
Suitable for high voltage switching and amplifier applications
Compact surface mount package
Reliable performance in harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 150V
Collector Current (IC): 1A
Collector-Emitter Saturation Voltage (VCE(sat)): 350mV @ 1A
Current Gain (hFE): 50 minimum @ 500mA, 10V
Transition Frequency (fT): 30MHz
Quality and Safety Features
Compliant with RoHS and REACH regulations
ESD protection for reliable operation
Compatibility
Compatible with standard TO-236AB surface mount package
Interchangeable with similar high voltage NPN BJT transistors
Application Areas
High voltage switching circuits
Amplifier and driver applications
Power supply and control circuits
Product Lifecycle
Currently in active production
Replacement and upgrade options available from NXP
Key Reasons to Choose This Product
High voltage capability with low saturation voltage for efficient operation
Compact and reliable surface mount package
Wide operating temperature range suitable for harsh environments
Compliance with industry safety and environmental standards
