Manufacturer Part Number
NX2301P,215
Manufacturer
Nexperia
Introduction
The NX2301P,215 is a P-channel enhancement-mode MOSFET from Nexperia, designed for use in automotive and other high-reliability applications.
Product Features and Performance
Trench MOSFET technology for low on-resistance and high-speed switching
Continuous drain current of 2A at 25°C
Drain-to-source voltage up to 20V
Operating temperature range up to 150°C
Low gate charge and input capacitance for efficient switching
Qualified to the AEC-Q101 automotive standard
Product Advantages
Excellent thermal performance and power handling capability
Reliable operation in harsh automotive environments
Efficient switching for power management applications
Small and compact TO-236AB package
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Maximum gate-to-source voltage (Vgs): ±8V
On-resistance (Rds(on)): 120mΩ @ 1A, 4.5V
Input capacitance (Ciss): 380pF @ 6V
Power dissipation: 400mW (Ta), 2.8W (Tc)
Quality and Safety Features
RoHS3 compliant
Qualified to the AEC-Q101 automotive standard
Robust and reliable design for long-term performance
Compatibility
The NX2301P,215 is compatible with a wide range of electronic systems and can be used in various power management and control applications.
Application Areas
Automotive electronics
Power supplies
Motor drives
Battery management systems
General-purpose power management
Product Lifecycle
The NX2301P,215 is an active product and is not nearing discontinuation. Replacement or upgraded versions may become available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability for reliable operation in demanding applications
Efficient switching characteristics for improved power management and energy efficiency
Compact and space-saving TO-236AB package
Automotive-grade qualification and reliability for use in harsh environments
Broad compatibility and versatile application potential