Manufacturer Part Number
NX2301P,215
Manufacturer
NXP Semiconductors
Introduction
P-channel Trench MOSFET transistor designed for automotive and industrial applications.
Product Features and Performance
20V drain-source voltage
120mΩ on-resistance at 1A, 4.5V
2A continuous drain current at 25°C
380pF input capacitance at 6V
400mW power dissipation at Ta, 2.8W at Tc
Gate charge of 6nC at 4.5V
Product Advantages
Automotive-grade AEC-Q101 qualified
Trench MOSFET technology for low on-resistance
Wide operating temperature range up to 150°C
Key Technical Parameters
Vdss: 20V
Vgs(max): ±8V
Rds(on) max: 120mΩ @ 1A, 4.5V
Id continuous: 2A @ 25°C
Ciss max: 380pF @ 6V
Pd max: 400mW @ Ta, 2.8W @ Tc
Quality and Safety Features
AEC-Q101 qualified for automotive applications
Trench MOSFET technology for reliable performance
Compatibility
Surface mount SOT-23 package
Suitable for automotive and industrial applications
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Automotive-grade reliability with AEC-Q101 qualification
Low on-resistance and high current capability
Wide operating temperature range
Compact surface mount package
Suitable for both automotive and industrial applications