Manufacturer Part Number
BUK7Y6R0-60EX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage
100A Continuous Drain Current
6mΩ On-Resistance
195W Power Dissipation
4021pF Input Capacitance
4nC Gate Charge
Product Advantages
Automotive grade, AEC-Q100 qualified
Trench MOSFET technology
Low on-resistance for high efficiency
High power density and thermal performance
Key Technical Parameters
Vdss: 60V
Vgs (Max): ±20V
Rds On (Max): 6mΩ @ 25A, 10V
Id (Continuous): 100A @ 25°C
Ciss (Max): 4021pF @ 25V
Power Dissipation (Max): 195W @ Tc
Quality and Safety Features
RoHS3 compliant
Automotive grade, AEC-Q100 qualified
Compatibility
LFPAK56, Power-SO8 package
Surface mount
Application Areas
Automotive electronics
Power conversion and control
Industrial and consumer applications
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
Excellent performance and efficiency
Automotive-qualified reliability
Compact and thermally efficient package
Suitable for high-power applications
