Manufacturer Part Number
BUK7Y6R0-60EX
Manufacturer
NXP Semiconductors
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 100A
Wide operating temperature range from -55°C to 175°C
Low gate charge for fast switching
Trench MOSFET technology for high reliability
Product Advantages
Excellent thermal performance
Robust and rugged design
Efficient power conversion
Fast and reliable switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6mΩ @ 25A, 10V
Continuous Drain Current (Id): 100A @ 25°C (Tc)
Input Capacitance (Ciss): 4021pF @ 25V
Power Dissipation (Pd): 195W @ 25°C (Tc)
Quality and Safety Features
Compliant with RoHS and REACH regulations
Tested for high reliability and long-term performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation
Power converters
Electric vehicles
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from NXP Semiconductors.
Key Reasons to Choose This Product
Excellent thermal management and high power capability
Fast and efficient switching performance
Proven reliability and robustness
Compatibility with a wide range of power applications
Availability of replacement and upgrade options from the manufacturer
BUK7Y8R7-60E115NXP USA Inc.N-CHANNEL POWER MOSFET