Manufacturer Part Number
BUK7Y4R4-40EX
Manufacturer
Nexperia
Introduction
High-performance N-channel TrenchMOS FET transistor
Product Features and Performance
40V drain-source voltage
Extremely low on-resistance
Extremely low gate charge
Fast switching
High power density
Automotive-qualified
Product Advantages
Excellent thermal performance
Robust design
Reliable operation
Suitable for high-power, high-efficiency applications
Key Technical Parameters
Drain-source voltage (Vdss): 40V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4.4mΩ @ 25A, 10V
Continuous drain current (Id): 100A @ 25°C
Input capacitance (Ciss): 2781pF @ 25V
Power dissipation (Ptot): 147W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q100 qualified
Designed for automotive and industrial applications
Compatibility
LFPAK56 and Power-SO8 package options
Suitable for surface mount assembly
Application Areas
High-efficiency power conversion
Automotive power management
Industrial motor drives
Switch-mode power supplies
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Exceptional power density and efficiency
Reliable and robust design for demanding applications
Automotive and industrial grade quality
Ease of integration and compatibility with common assembly processes