Manufacturer Part Number
BCP53-10,115
Manufacturer
Nexperia
Introduction
The BCP53-10,115 is a single PNP bipolar junction transistor (BJT) from Nexperia, designed for various automotive and industrial applications.
Product Features and Performance
High power handling up to 1 W
High collector-emitter breakdown voltage of 80 V
High collector current capability of 1 A
Low collector-emitter saturation voltage of 500 mV @ 500 mA
High DC current gain of 63 @ 150 mA, 2 V
High transition frequency of 145 MHz
AEC-Q100 qualified for automotive applications
Wide operating temperature range up to 150°C
Product Advantages
Robust design for high-reliability applications
Efficient power handling for power electronics
Suitable for high-speed switching and amplification
Key Technical Parameters
Power Max: 1 W
Voltage Collector Emitter Breakdown (Max): 80 V
Current Collector (Ic) (Max): 1 A
Current Collector Cutoff (Max): 100 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500 mV @ 50 mA, 500 mA
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150 mA, 2 V
Frequency Transition: 145 MHz
Quality and Safety Features
RoHS3 compliant
AEC-Q100 qualified for automotive applications
Compatibility
Packaged in the industry-standard SOT-223 surface mount package
Compatible with a wide range of electronic circuits and systems
Application Areas
Automotive electronics
Power supplies
Switching and amplification circuits
Industrial control systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from Nexperia as technology evolves.
Several Key Reasons to Choose This Product
Robust and reliable design for high-reliability applications
Efficient power handling capabilities for power electronics
Suitable for high-speed switching and amplification
AEC-Q100 qualification for automotive applications
Industry-standard packaging for easy integration into a wide range of electronic systems