BCP53-10T1 - onsemi

Manufacturer Part Number

BCP53-10T1

Manufacturer

onsemi

Introduction

The BCP53-10T1 is a discrete semiconductor product from onsemi, specifically a PNP bipolar junction transistor (BJT).

Product Features and Performance

Operates in the temperature range of -65°C to 150°C (junction temperature)

Max power dissipation of 1.5 W

Max collector-emitter breakdown voltage of 80 V

Max collector current of 1.5 A

Saturation voltage (VCE(sat)) of 500 mV @ 50 mA/500 mA collector current

DC current gain (hFE) of at least 63 @ 150 mA/2 V collector-emitter voltage

Transition frequency of 50 MHz

Product Advantages

Suitable for various switching and amplification applications

Compact surface mount package (TO-261)

Robust temperature and voltage capabilities

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 80 V

Collector Current (IC): 1.5 A

Power Dissipation (Ptot): 1.5 W

Transition Frequency (fT): 50 MHz

Quality and Safety Features

RoHS non-compliant

Compatibility

TO-261-4, TO-261AA package types

Application Areas

Switching circuits

Amplifier circuits

General-purpose electronic applications

Product Lifecycle

The BCP53-10T1 is an active product, and replacements or upgrades may be available.

Key Reasons to Choose This Product

Suitable for a wide range of operating temperatures and power dissipation requirements

Compact surface mount package for efficient board space utilization

Robust electrical characteristics, including high breakdown voltage and current capabilities

Proven reliability and performance in various electronic applications