MRF5812R1 - Microsemi Corporation

Manufacturer Part Number

MRF5812R1

Manufacturer

Microsemi

Introduction

High-performance RF power transistor designed for use in a wide range of RF and microwave applications

Product Features and Performance

Capable of operating at frequencies up to 5GHz

Provides high gain of 13dB to 15.5dB

Low noise figure of 2dB to 3dB at 500MHz

200mA maximum collector current

15V maximum collector-emitter breakdown voltage

25W maximum power dissipation

Product Advantages

Excellent RF performance for high-frequency applications

Compact surface-mount package for efficient board space utilization

Reliable and robust design for long-term operation

Key Technical Parameters

Transistor Type: NPN

DC Current Gain (hFE): 50 minimum @ 50mA, 5V

Frequency Transition: 5GHz

Gain: 13dB to 15.5dB

Noise Figure: 2dB to 3dB @ 500MHz

Quality and Safety Features

Rigorous quality control and testing processes

Compliant with relevant safety standards

Compatibility

Suitable for a wide range of RF and microwave applications, including amplifiers, oscillators, and switches

Application Areas

Wireless communication systems

Radar and satellite communication systems

Test and measurement equipment

Industrial and medical electronics

Product Lifecycle

Currently in active production

No immediate plans for discontinuation

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

Excellent RF performance and high-frequency capabilities

Compact and efficient surface-mount package

Reliable and robust design for long-term operation

Compatibility with a wide range of RF and microwave applications

Backed by Microsemi's quality assurance and customer support